|Conversion from S to Z parameters and import of measurements in Touchstone format. Comparisons between measurements and simulations.|
|Extraction of susceptibility threshold of ICs to 1MHz-5GHz radiofrequency disturbances, with control of susceptibility criterion, power and frequency.|
|Interface for importing XML near-field scan measurement data according to the IEC 61 967 XML standard|
|Analytical formulas to extract electrical parameters of different kind of transmission lines and interconnects|
|Build the 3D aspect of the package, locate I/Os and evaluate the whole package R,L,C|
|Construction of a 3D view of the IC package and 3D extraction of R, L, C of each pins from partial elements computations based on quasi-static approximation.|
|Simulation of voltage waveform, forward voltage, reflected voltage, impedance, reflection coefficient profiles vs time|
|Imports Touchstone S parameter measurement file and deembeds the measurements.|
IC-EMC proposes S parameters simulation on N port devices. A special screen allows conversion from S to Z parameters and import of measurements in Touchstone format. Comparisons between measurements and simulations help users to build equivalent models of N port devices (circuit, PCB, cable...). Following figures presents various S parameter measurement and simulation results.
IC-EMC offers a tool dedicated to extraction of susceptibility threshold of circuits to radiofrequency disturbances, in relation with industrial standards of EMC of ICs (IEC 62132). Susceptibility of circuits is extracted through WinSPICE transient simulation. IC-EMC controls the frequency sweep of RF disturbances, helps the user to define a particular immunity criterion and extract the required forward, reflected and transmitted power to make the circuit fail. The figure below describes the user control interface for susceptibility simulation (on the left) and the Power vs Frequency plane where simulated and measured susceptibility threshold are compared.
Near field scan measurements and simulations produce a large amount of data ot be processed. The format of the data is closely linked to the supplier of the acquisition or simulation software, rendering extremely difficult to exchange between suppliers, customers, EDA tool vendors, academics... The XML format is an "universal" exchange format for near-field scan data, portable between operating systems, readable by users and any software. The format is opened and additional keywords can be added.
IC-EMC provides an interface for importing XML near-field scan measurement data according to the IEC 61 967 XML standard. The image below presents an example of magnetic near field scan measurement made above a microcontroller and has been built by IC-EMC near field scan tool. Measurements have been imported in XML format. The XML file provide near field scan data measurements, but also information about measurement set-up, component under test and associated image.
The IC-EMC tool "Interconnect Parameters" provides a set of analytical formulas to extract electrical parameters of different kind of transmission lines and interconnects (microstrip line, stripline, coplanar waveguide, parallel lines, vias...). Electrical models based on quasistatic approximations can be automatically generated for different types of analysis (impedance, S parameter, transient, crosstalk, near field radiation).
IBIS is a standardized format for analog interfaces of digital I/O buffers modeling, which provides a right balance between comprehensive detail of the IC and a sufficient accuracy for signal integrity simulation. IBIS is compenent-centric i.e. it describes all pins of the physical component (pin-out, package, models).
A set of "hidden" keywords are added as comments in the IBIS file to describe the IC package. From these keywords, the IC-EMC 3D Package Viewer is able to build the 3D aspect of the package in order to locate the placement of I/Os, especially power supply/groundpins. Coupled with the tool Advanced SPICE and IBIS, R, L, C parasitic of package pins can be evaluated rapidly based on closed-form analytical expressions.
Signal integrity issues are related to impedance discontinuity in interconnects. Time Domain Reflectometry is a valuable equipment used to locate impedance impedance discontinuities and determine the nature of these discontinuities. IC-EMC proposes a new symbol for TDR simulation in the palette symbol. Voltage waveform, forward voltage, reflected voltage, impedance, reflection coefficient profiles vs time can be simulated with this symbol. The figure below presents an example of simulation of multiple reflections with the TDR symbol.
Extracting the electrical model of a device from S parameter measurement is often a complex operation due to the parasitic effects of the needed attachments for connection of the device to the vector network analyzer, which should be removed. The operation of deembedding allows to remove mathematically the attachment from the measurements. IC-EMC proposes a tool which imports raw S parameter measurement file in Touchstone file and deembeds the measurement. The result, as shown on the figure below, corresponds to the measurement profile that would be obtained if the measurement was done directly on the device under test.
The accurate extraction of electrical parasitic elements associated to package pins is a major issue to predict voltage bounce in IC. An accurate extraction of package model requires a precise 3D geometrical model and the use of a numerical method. The creation of geometrical model and numerical simulation are time-consuming operations.
The tool Advanced Package Model proposes a environment to simplify the construction of IC package and extract R, L, C of each pins from partial elements computations based on quasi-static approximation. Various types of package can be built (Quad Flat Package, Small Outline Package, Ball Grid Array) from a set of geometrical information. The geometrical model is then meshed and partial elements can be computed and displayed on a 2D graph.